Oxidation kinetics of reaction-sintered silicon carbide

Fundamental Aspects of Silicon Carbide Oxidation

Silicon carbide (SiC), which exhibits a wider band gap as well as a superior breakdown field and thermal conductivity over conventional Si, has gained considerable attention for future power electronics [1]. Among the various types of power devices, metal-oxide-semiconduc‐ tor field-effect transistors (MOSFETs), which provide a normally-off characteristic, should become a key component for next...

Oxidation Behaviour of Silicon Carbide - a Review

Silicon Carbide as an inorganic material possesses properties like high thermochemical stability, high hardness and fracture toughness, low thermal expansion coefficient etc. It is therefore, widely used in the making of refractory, semiconductor devices, combustion engines, etc. Being a nonoxide, it has a tendency to get oxidized at elevated temperature under oxidizing atmosphere. Oxidation of...

The Active Oxidation of Silicon Carbide

The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 0 2(g) = Si02(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + 0 2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and ...

Thermal Oxidation Mechanism of Silicon Carbide

The Gas Phase Oxidation of Acetaldehyde Reaction Mechanism and Kinetics

The mechanism of the low temperature oxidation of gaseous acetaldehyde was investigated in the temperature range of 1 50-400?°C. The minor, intermediate and major products were identified and measured quantitatively by sampling directly into the ionization chamber of an MS10-C2 mass spectrometer from the reactor. The formation of H2O, CO, CO2, HCOOH, H2, HCHO, CH3COOH and CH3OH as the major pro...