Origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven th...

Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy

We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectrosco...

Anomalous enhancement in interfacial perpendicular magnetic anisotropy through uphill diffusion

We observed interfacial chemical sharpening due to uphill diffusion in post annealed ultrathin multilayer stack of Co and Pt, which leads to enhanced interfacial perpendicular magnetic anisotropy (PMA). This is surprising as these elements are considered as perfectly miscible. This chemical sharpening was confirmed through quantitative energy dispersive x-ray (EDX) spectroscopy and intensity di...

Enhanced interface perpendicular magnetic anisotropy in electrodeposited Co/Au(111) layers

Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ) becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM) for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide se...