Optoelectronics Simulation of CIGS-Based Solar Cells Using a Cd-Free Nontoxic ZrSxSe2?x as a Novel Buffer Layer

Abstract In this work, we investigate the performance of CIGS-based thin-film solar cells employing SCAPS-1D simulation package. The paper is mainly devoted to development ZrS x Se 2 ?x (where 0 ? 2) transition metal dichalcogenide (TMDC) as a Cd-free, nontoxic, and abundant buffer layer, first its kind. step, have evaluated impact p -MoSe interfacial layer between GIGS absorber Mo back contact. J –V characteristic showed higher slope, revealing that at CIGS/Mo interfaces beneficially on hetero-contact, mediating quasi-ohmic contact rather than Schottky type. For optimized cell using photovoltaic parameters, such short-circuit current density, open-circuit voltage, Fill Factor, efficiency, were investigated versus thickness, carrier concentration, bandgap values. results reveal an optimum efficiency ~ 25.5% 1.3 eV, corresponding 0.8 1.2 (i.e., = 0.8) 180 nm thicknesses, high concentration 1 × 10 18 cm ?3 . Furthermore, assessed with increment operating temperature from 275 475 K. observed decrease in V oc ascribed rise reverse saturation associated temperatures. study concludes excellent potential for fabricating high-performance CIGS thin Cd-free nontoxic layer.