Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor

Herein, we report the fabrication of a novel heterojunction field-effect transistor (HJFET) based on two-dimensional graphene (Gr), molybdenum diselenide (MoSe2), and black phosphorus (BP) that is shielded using hexagonal boron nitride to prevent device degradation. We perform electrical optoelectronic characterizations Gr/n-MoSe2 Gr/n-MoSe2/p-BP heterojunctions. Heterojunction n-MoSe2/p-BP exhibits potential barrier at interface, which allows use BP as top-gate contact adjust performances heterojunction. In absence gate voltage, heterojunctions indicate photoresponsivity (Rλ) specific detectivity (D*) 1.77 AW−1 1.4 × 1010 cmHz1/2W−1, 0.8 0.3 respectively. The junction with p-BP demonstrates best performance high stability in terms Rλmax = 3.37 D*max 3.16 rendering it extremely promising for photodetection applications.