Optimization of Effective Doping Concentration of Emitter for Ideal c-Si Solar Cell Device with PC1D Simulation

Increasing silicon solar cell efficiency plays a vital role in improving the dominant market share of photo-voltaic systems renewable energy sector. The performance cells can be evaluated by making profound analysis on various effective parameters, such as sheet resistance, doping concentration, thickness cell, arbitrary dopant profile, etc., using software simulation tools, PC1D. In this paper, we present observations obtained from evaluation carried out impact resistance cell’s parameters PC1D software. After which, EDNA2 tool was used to analyse emitter saturation current density for chosen profile. Results indicated that diffusion profile with low surface concentration and shallow junction depth improve blue response at frontal side cell. decreases 66.52 36.82 fA/cm2 subsequent increase resistance. also increased 89.6% 97.5% rise addition, short circuit open voltage observed improved 0.6 mA/cm2 3 mV value 130 Ω/sq, which resulted achieving highest 20.6%.