Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching
نویسندگان
چکیده
منابع مشابه
Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T off) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T off. The hole concentration decreasing at the pore tips d...
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Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...
متن کاملStructural, elastic and electronic properties of 2H- and 4H-SiC
The structural, five different elastic constants and electronic properties of 2Hand 4H-Silicon carbide (SiC) are investigated by using density functional theory (DFT). The total energies of primitive cells of 2Hand 4H-SiC phases are close to each other and moreover satisfy the condition E2H >E4H . Thus, the 4H-SiC structure appears to be more stable than the 2Hone. The analysis of elastic prope...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2016
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4968172