OPTICAL MONITORING OF CZOCHRALSKI CRYSTALS GROWTH FROM HIGH-TEMPERATURE MELT
نویسندگان
چکیده
منابع مشابه
Growth of Oxide Laser Crystals by Czochralski Method
The growth of series of actual laser crystals belonging to di erent structural types by the Czochralski method is presented. The primary attention is given to single crystalline compounds and their solid solutions with garnet structure (scandium-containing rare-earth garnets with general formula {LnSc}3[ScMe]2Me3O12, Me = Al, Ga) as well as with olivine (forsterite Mg2SiO4) and scheelite struct...
متن کاملCzochralski Growth of Oxide Crystals: Numerical Simulation and Experiments
A mathematical model that explores the basic transport phenomena in a Czochralski process, their interaction and influence on the growth of high quality oxide crystals is presented. Rare earth garnets YAG and Nd-doped YAG are considered as representative oxide materials for the purpose of modeling and numerical simulation. The model proposed is evolutionary in time, and axisymmetric in space. A...
متن کاملThe growth of ZnO crystals from the melt
The peculiar properties of zinc oxide (ZnO) make this material interesting for very different applications like light emitting diodes, lasers, and piezoelectric transducers. Most of these applications are based on epitaxial ZnO layers grown on suitable substrates, preferably bulk ZnO. Unfortunately the thermochemical properties of ZnO make the growth of single crystals difficult: the triple poi...
متن کاملGrowth of Single Ti O Crystals from the Melt
Procedures are described for growth of large single crystals of TiO , (1.501 < x< 1.512) that are reasonably free of cationic impurities and of C and N. Data concerning the stoichiometry and the segregation of impurities during crystal growth are presented. The electrical properties of doped and pure single crystal materials are briefly described. Accepted for the Air Force Franklin C. Hudson C...
متن کاملMelt-growth dynamics in CdTe crystals.
We use a new, quantum-mechanics-based bond-order potential (BOP) to reveal melt growth dynamics and fine scale defect formation mechanisms in CdTe crystals. Previous molecular dynamics simulations of semiconductors have shown qualitatively incorrect behavior due to the lack of an interatomic potential capable of predicting both crystalline growth and property trends of many transitional structu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
سال: 2015
ISSN: 1609-3577
DOI: 10.17073/1609-3577-2013-2-32-39