Optical characteristics of intrinsic microcrystalline silicon
نویسندگان
چکیده
منابع مشابه
Plasma-enhanced chemical vapor deposition of intrinsic microcrystalline silicon from chlorine-containing source gas
Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasmaenhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added to the SiH4-H2 source gas. A dark-conductivity of 5·10 -8 S/cm, activation energy of 0.62 eV and photoconductivity of 1·10 S/cm are obtained. The optical bandgap for this material is approximately 1.1 eV. No special gas purif...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2002
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.66.115301