On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity telecom wavelengths and are suitable for integration planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped deep-level impurities is a promising material silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength region caused by creation an impurity band within gap. In this work, we present first experimental demonstration lateral Te-hyperdoped Si PIN operating optical bands. We provide detailed description fabrication process, working principle, performance photodiodes, including their key figure merits. Our results active passive photonic elements on single chip, leveraging advantages CMOS