Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

One of the key issues in GaN-based devices is resistivity and technology ohmic contacts to n-type GaN. This work presents, for first time, effective intentional oxygen doping sputtered GaN films obtain highly conductive n+-GaN:O films. We have developed a novel simple method these The based on room temperature magnetron sputtering single crystal bulk target doped with oxygen. exhibit polycrystalline structure crack-free surface free electron concentration 7.4 × 1018 cm3. Ohmic contact GaN:Si sub-contact layer achieves specific resistance order 10−5 Ωcm2 after thermal treatment. obtained results are very promising development whole new class n-GaN.