Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide
نویسندگان
چکیده
منابع مشابه
Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Probe and Secondary Electron Microscopy
The availability of two-dimensional (2-D) dopant profiling techniques to Silicon Carbide (SiC) pn junction is discussed. We compared the results of scanning capacitance microscopy (SCM), scanning spreading resistance microscopy (SSRM), and secondary electron microscopy (SEM), where the cross-sections of a SiC wafer with n-type epi-layers and highly-doped p and n regions were used. The SSRM curr...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3549198