منابع مشابه
A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
A new ohmic contact scheme for gallium nitride is presented. The use of Nitrideforming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, ...
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The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09×10 Ω·cm after annealing at 650 C in vacuum. A detailed mechanism of ohmic contact formation is discussed. By usi...
متن کاملDoes p-type ohmic contact exist in WSe2-metal interfaces?
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (...
متن کاملHigh-transparency Ni/Au ohmic contact to p-type GaN
In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current– voltage (I – V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7310 V cm at an alloying temperature of 450 °C. I...
متن کاملLow Resistance Ohmic Contacts to p-Ge C on Si
We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge0:9983C0:0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10 5 cm2 to as low as 5:6 10 6 cm2. Theoretical calculations of the contact resistance of metals on ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2831918