OFET Preparation by Lithography and Thin Film Depositions Process
نویسندگان
چکیده
منابع مشابه
CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions
................................................................................................................................................ iii Populärvetenskaplig Sammanfattning ................................................................................................ v Preface .............................................................................................................
متن کاملPreparation and growth of SnS thin film deposited by spray pyrolysis technique
In this paper thin films of tin sulfide (SnS) were deposited on the glass substrates using spray pyrolysis method with the substrate temperatures in the range of 400–600℃, keeping the other deposition parameters constant. In this work the characteristic of SnS thin films investigated. The XRD pattern and optical transmittance of thin films also are discussed. With the change in concen...
متن کاملOxides and Thin Film Preparation Methods
In recent years, the demand for thin film coatings on large area substrates has been rapidly increasing. Coating is some times required to make an object harder, or to provide the surface with particular electrical and optical properties. Hence, research on thin film science has received much attention due to its tremendous applications in modern technology. The importance of coatings and the s...
متن کاملNanoimprint lithography for high-efficiency thin-film silicon solar cells.
We demonstrate high-efficiency thin-film silicon solar cells with transparent nanotextured front electrodes fabricated via ultraviolet nanoimprint lithography on glass substrates. By replicating the morphology of state-of-the-art nanotextured zinc oxide front electrodes known for their exceptional light trapping properties, conversion efficiencies of up to 12.0% are achieved for micromorph tand...
متن کاملA Maskless Laser-Write Lithography Processing of Thin-Film Transistors
We report on a fabrication method of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) using a maskless laser-write lithography (LWL). Level-to-level alignment with a high accuracy is demonstrated using LWL method. The obtained results show that it is possible to fabricate a-Si:H TFTs using a well-established a-Si:H TFT technology in combination with the maskless lithogra...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: TELKOMNIKA (Telecommunication Computing Electronics and Control)
سال: 2018
ISSN: 2302-9293,1693-6930
DOI: 10.12928/telkomnika.v16i1.6544