Observation of planar Hall effect in topological insulator—Bi₂Te₃

Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an that stems mostly from conduction due to topologically protected surface states. Although surfaces states play a critical role and are of utmost importance TIs, our present study reflects the need for considering bulk understanding PHE TIs. Here, we demonstrate enhancement amplitude by three times doubling thickness Bi$_2$Te$_3$ film on Si (111). The reaches $\approx$~6 n$\Omega$m 30 quintuple layer (QL) device compared $\approx$~2 14 QL. We find increases with temperature QL films grown (111) Al$_2$O$_3$ (0001). Our experiments indicate contribution TIs could be significant.