Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals
نویسندگان
چکیده
منابع مشابه
Three-dimensional numerical simulation of temperature and flow fields in a Czochralski growth of germanium
For a Czochralski growth of Ge crystal, thermal fields have been analysed numerically using the three-dimensional finite volume method (FLUENT package). The arrangement used in a real Czochralski crystal growth lab included a graphite crucible, heat shield, heating device, thermal insulation and chamber including two gas outlets. We have considered two cases for calculations, which are configur...
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ژورنال
عنوان ژورنال: Journal of Rare Earths
سال: 2007
ISSN: 1002-0721
DOI: 10.1016/s1002-0721(07)60501-8