Novel doping alternatives for single-layer transition metal dichalcogenides
نویسندگان
چکیده
منابع مشابه
Degenerate n-doping of few-layer transition metal dichalcogenides by potassium.
We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of ~1.0 × 10(13) cm(-2) and 2.5 × 10(12) cm(-2) for MoS2 and WSe2 are obtained, respectively. In addition, top-gated WSe2 and MoS2 n-FETs with selective K doping at the metal source/drain contacts are fabricated and shown to exhibit low...
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This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers ...
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We develop an analytically solvable model able to qualitatively explain nonhydrogenicexciton spectra observed recently in two-dimensional (20) semiconducting transition-metal dichalcogenides. Our exciton Hamiltonian explicitly includes additional angular momentum associated with the pseudospin degree of freedom unavoidable in 20 semiconducting materials with honeycomb structure. We claim that t...
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We selected k-meshes to ensure the energy convergence within 10 meV/atom. To be specific, 5×5×5 and 6×6×1 k-point grid were employed for primitive cells of SiO2 and every TMD, respectively. The gaussian smearing method with the smearing width of 0.05 eV was used for all calculations in our study. The monolayers of TMDs can have various polymorphs. In this study, we employed the phases experimen...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2017
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4994997