Non?Volatile Photo?Switch Using a Diamond pn Junction

Spin-orbit effects in a graphene bipolar pn junction

A graphene pn junction is studied theoretically in the presence of both intrinsic and Rashba spin-orbit couplings. We show that a crossover from perfect reflection to perfect transmission is achieved at normal incidence by tuning perpendicular electric field. By further studying angular dependent transmission, we demonstrate that perfect reflection at normal incidence can be clearly distinguish...

A Nanoscale PN Junction in Series with Tunable Schottky Barriers

PN junctions in nanoscale materials are of interest for a range of technologies including photodetectors, solar cells and light-emitting diodes. However, Schottky barriers at the interface between metal contacts and the nanomaterial are often unavoidable. The effect of metalsemiconductor interfaces on the behavior of nanoscale diodes must be understood, both to extract the characteristics of th...

Nonvolatile memory disturbs due to gate and junction leakage currents

We address disturbs due to gate oxide and junction leakage currents in floating gate nonvolatile memories (NVM). The junction leakage is important, because the gate oxide current is proportional to junction current. We find the low gate leakage current to be caused by field ionization (FI) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge accumulati...

Polymer PN Junction by low Energy Double Implantation Technique

721 Abstract— Polymer base organic PN junction with various ion types was studied. Low-energy ion implantation technique(~keV) is very useful in physical doping on PPP(Polyparaphenylene) polymer. By double implantation, effective organic PN junction was achieved. The best obtained electrical I-V property was rectification ratio which was about 10000. However, still have problems in low junction...

STUDIES OF SILICON PN JUNCTION SOLAR CELLS By