Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
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چکیده
منابع مشابه
Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge(1-x)Sn(x) alloy nanowires, with a Sn incorporation up to 9.2 at.%, far in excess of the equilibrium solubility of S...
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ژورنال
عنوان ژورنال: Nature Communications
سال: 2016
ISSN: 2041-1723
DOI: 10.1038/ncomms11405