Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors
نویسندگان
چکیده
منابع مشابه
A computational study of ballistic graphene nanoribbon field effect transistors
A self-consistent solution of Schrödinger equation based on Green’s function formalism coupled to a two-dimensional Poisson’s equation for treating the electrostatics of the device is used to simulate and model the ballistic performance of an armchair edged GNRFET. Our results take into account interactions of third nearest neighbors, as well as relaxation of carbon–carbon bonds in the edges of...
متن کاملTheoretical study of graphene nanoribbon field-effect transistors
Carbon nanoribbons (CNRs) have been recently experimentally and theoretically investigated for different device applications due to their unique electronic properties. In this work, we present a theoretical study of the electronic structure, e.g. bandgap and density of states, of armchair carbon nanoribbons, using both, simple analytical solutions and numerical solutions based on a πorbital tig...
متن کاملBeyond graphene: stable elemental monolayers of silicene and germanene.
Two-dimensional materials are one of the most active areas of nanomaterials research. Here we report the structural stability, electronic and vibrational properties of different monolayer configurations of the group IV elemental materials silicene and germanene. The structure of the stable configuration is calculated and for planar and low (<1 Å) atomic buckling configurations, analysis of the ...
متن کاملGraphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated ...
متن کاملNon-Linear Temperature Dependence in Graphene Nanoribbon Tunneling Transistors
It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR) band-to-band tunneling transistor (TFET) should show significant and nonlinear temperature dependence. Furthermore, the nature of this non-linearity changes as a functi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Advanced Simulation in Science and Engineering
سال: 2015
ISSN: 2188-5303
DOI: 10.15748/jasse.2.171