Nitrogen‐Doped Carbon Quantum Dots on Graphene for Field‐Effect Transistor Optoelectronic Memories

The development of field-effect transistor-based (FET-based) non-volatile optoelectronic memories is vital toward innovations necessary to improve computer systems. In this work, for the first time, unique charge-trapping and charge-retention properties solution-processed colloidal nitrogen-doped carbon quantum dots (CQDs) are harnessed achieve functional programmable by UV illumination with a multilevel writing possibility. Of particular note, long-lasting memory function can be achieved thanks vast charge trapping sites provided N-doped CQDs resultant photo-gating effect exercised on graphene FET. erased positive gate bias which provides sufficient carriers remove trapped charges through recombination. This study highlights possibility engineer high-performance all-carbon FET-based manipulating coupling graphene.