New photoresists for deep ultraviolet (<300 nm) exposure
نویسندگان
چکیده
منابع مشابه
Ultraviolet Spectral Irradiance Scale Comparison: 210 nm to 300 nm
Comparison of the irradiances from a number of ultraviolet spectral irradiance standards, based on different physical principles, showed agreement to within their combined standard uncertainties as assigned to them by NIST. The wavelength region of the spectral irradiance comparison was from 210 nm to 300 nm. The spectral irradiance sources were: an electron storage ring, 1000 W quartz-halogen ...
متن کاملExposure of Photoresists
Mask-Aligner and Stepper The typical emission spectrum of a mask aligner or stepper with Hg light source and without optical selective mirrors/filters contains g(wavelength 436 nm), h(405 nm) and i-line (365 nm) (fig. right-hand), with an iline intensity approx. 40 % of the total emission between 440 and 340 nm. The absorption spectrum (spectral sensitivity see next section) of AZ® and TI photo...
متن کاملExposure of Photoresists
Mask-Aligner and Stepper The typical emission spectrum of a mask aligner or stepper with Hg light source and without optical selective mirrors/filters contains g(wavelength 436 nm), h(405 nm) and i-line (365 nm), with an i-line intensity approx. 40 % of the total emission between 440 and 340 nm. The absorption spectrum (spectral sensitivity see next section) of AZ® and TI photoresists is matche...
متن کاملPositive Photoresists - Exposure
There are a large number of materials, both organic and inorganic, which are sensitive to light (see, for example, Ref. 1). However, over the years one specific class of photosensitive materials has been dominate in the application of integrated circuit manufacturing -the diazonaphthoquinone/novolak system found in conventional g-line and i-line positive photoresists. Rather than present a comp...
متن کاملPattern characterization of deep-ultraviolet photoresists by near-field infrared microscopy
Chemical contrast at subwavelength spatial resolution ~l/10! is achieved using a fiber-based, infrared near-field microscope, at 3 mm wavelength. Chemically amplified polymer photoresists ~poly~t-butylmethacrylate!!, patterned by ultraviolet radiation and 250 nm thick, are imaged using infrared ~IR! wavelengths situated around the OH stretch band of the polymer, a region sensitive to photochemi...
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ژورنال
عنوان ژورنال: Canadian Journal of Chemistry
سال: 1983
ISSN: 0008-4042,1480-3291
DOI: 10.1139/v83-149