New Findings on the Drain-Induced Barrier Lowering Characteristics for Tri-Gate Germanium-on-Insulator p-MOSFETs
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2015
ISSN: 2168-6734
DOI: 10.1109/jeds.2015.2475262