Neutral Beam Penetration Considerations for CIT

Hyperthermal neutral beam etching

A pulsed beam of hyperthermal fluorine atoms with an average translational energy of 4.8 eV has been used to demonstrate anisotropic etching of Si. For 1.4 Hz operation, a room-temperature etch rate of 300 Å/min for Si~100! has been measured at a distance of 30 cm from the source. A 14% undercutting for room-temperature etching of Novolac-masked Si features was achieved under single-collision c...

Intense Diagnostic Neutral Beam for ITER

An intense pulsed diagnostic neutral beam (IDNB) is proposed to enable active spectroscopic diagnostics on ITER. The proposed intense neutral beam source will employ a magnetically insulated diode (MID) ion source, consisting of a plasma anode and a virtual cathode. Clean, intense (~25 A/cm) hydrogen or deuterium neutral beams will be generated with an energy up to 125 keV/amu. A short pulse (1...

CIT Avoidance Guidelines and D-CIT Development

Waveguide atom beam splitter for laser-cooled neutral atoms.

A laser-cooled neutral-atom beam from a low-velocity intense source is split into two beams while it is guided by a magnetic-field potential. We generate our multimode beam-splitter potential with two current-carrying wires upon a glass substrate combined with an external transverse bias field. The atoms are guided around curves and a beam-splitter region within a 10-cm guide length. We achieve...

Neutral beam etching for device isolation in AlGaN/GaN HEMTs

1 Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan 2 Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Advanced Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Microsystems Technology Laboratories, Massachusetts Institute of Technolog...