Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering

Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide Aluminium-doped-Zinc-oxide commercial examples, with their electrical resembling those of metals, despite, being limited up to 1.5µm. This work introduces smooth compact amorphous thin films n -type semiconducting WO 3-x prepared by RF-sputtering followed annealing dry air, as optical layers tailorable dielectric properties. We evaluate Figure Merit, combining transparency, rate the performances a conductive layer.