Nanoscale Accumulated Body Si nMOSFETs

Nanoscale oxide patterns on Si (100) surfaces

Self-organized nanoscale structures in Si/Ge films

Nanotechnologies of the future will demand the creation of large arrays of nanoscale structures and morphologies for electronic and optoelectronic devices. One approach to the creation of such arrays is to ‘‘let nature do it’’. By depositing on each other semiconductor materials that differ slightly in lattice constant, one can use the resulting lattice strain to obtain arrays of threedimension...

Investigation of the electron transport and electrostatics of nanoscale strained Si/Si/Ge heterostructure MOSFETs

This thesis presents work aimed at investigating the possible benefit of strained-Si/SiGe heterostructure MOSFETs designed for nanoscale (sub-50-nm) gate lengths with the aid of device fabrication and electrical measurements combined with computer simulation. MOSFET devices fabricated on bulk-Si material are scaled in order to achieve gains in performance and integration. However, as device dim...

Nanoscale distortions of Si quantum wells in Si/SiGe quantum-electronic heterostructures.

O N Devices exploiting individual quantum states of electrons promise to extend dramatically the capabilities of silicon integrated electronics. One route to forming such devices is via coup led electrostatically defi ned quantum dots in which electrons are confi ned in a thin strained Si layer on SiGe. [ 1 , 2 ] The unique advantage of forming such quantum dots in Si is the long quantum dephas...

Quasiperiodic nanoscale faceting of high-index Si surfaces.

Scanning tunneling microscopy reveals that Si(112) reconstructs into quasiperiodic, nanometer-scale facets. Each sawtoothlike facet consists of a single unit cell wide reconstructed (111) terrace s7 3 7 or 5 3 5d opposed by a 60 to 110 Å wide (337) terrace. Nanofacets with a similar structure are also observed on Si(335), indicating that they are a general phenomenon for some range of vicinalit...