Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide
نویسندگان
چکیده
منابع مشابه
Nanoionics-based resistive switching memories.
Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical...
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2017
ISSN: 1944-8244,1944-8252
DOI: 10.1021/acsami.6b13746