Nanofabrication of Sulfonated Polystyrene-g-FEP with Silver Ion (Ag+) using Ion Beam Direct Etching and Reduction
نویسندگان
چکیده
منابع مشابه
Ion beam induced dry etching and possibility of highly charged ion beam
Dry etching techniques employing ion beam induced surface reaction and the possibility of highly charged ion beam in dry etching are described, and the preliminary work on dry etching of GaAs using highly charged ion (HCI) is also presented. In usual dry etching, total etch rate is a summation of the physical sputtering rate, the chemical etching rate, and the ion-induced chemical etching rate....
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ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 2011
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.24.513