Nanoelectronic circuits based on two-dimensional atomic layer crystals

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Nanoelectronic circuits based on two-dimensional atomic layer crystals.

Since the discovery of graphene and related forms of two-dimensional (2D) atomic layer crystals, numerous studies have reported on the fundamental material aspects, such as the synthesis, the physical properties, and the electrical properties on the transistor level. With the advancement in large-area synthesis methods, system level integration to exploit the unique applications of these materi...

متن کامل

Two-dimensional atomic crystals.

We report free-standing atomic crystals that are strictly 2D and can be viewed as individual atomic planes pulled out of bulk crystals or as unrolled single-wall nanotubes. By using micromechanical cleavage, we have prepared and studied a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides. These atomically thin sheets (essentia...

متن کامل

Ultrathin two-dimensional atomic crystals as stable interfacial layer for improvement of lithium metal anode.

Stable cycling of lithium metal anode is challenging due to the dendritic lithium formation and high chemical reactivity of lithium with electrolyte and nearly all the materials. Here, we demonstrate a promising novel electrode design by growing two-dimensional (2D) atomic crystal layers including hexagonal boron nitride (h-BN) and graphene directly on Cu metal current collectors. Lithium ions ...

متن کامل

Strain-engineered diffusive atomic switching in two-dimensional crystals

Strain engineering is an emerging route for tuning the bandgap, carrier mobility, chemical reactivity and diffusivity of materials. Here we show how strain can be used to control atomic diffusion in van der Waals heterostructures of two-dimensional (2D) crystals. We use strain to increase the diffusivity of Ge and Te atoms that are confined to 5 Å thick 2D planes within an Sb2Te3-GeTe van der W...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nanoscale

سال: 2014

ISSN: 2040-3364,2040-3372

DOI: 10.1039/c4nr03670k