Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors

Abstract Indirect bandgap of multilayer molybdenum disulfide has been recognized as a major hindrance to high responsivity MoS 2 phototransistors. Here, overcome this fundamental limitation, we propose structural engineering via nano-patterning using block copolymer lithography. The fabricated nanoporous , consisting periodic hexagonal arrays hexagon nanoholes, includes abundant edges having zigzag configuration atomic columns with and sulfur atoms. These exposed are responsible for multiple trap states in the region, confirmed by photo-excited charge-collection spectroscopy measurements on phototransistors, showing that in-gap only near valence band can result photogating effect. effect is therefore significantly enhance exhibiting an ultra-high photoresponsivity 622.2 A W ?1 . Our photosensing application paves route two-dimensional materials highly sensitive responsive optoelectronic devices.