MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness

Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it become the ideal material for next-generation optoelectronic devices. However, Schottky barrier height (?B) contact resistance are obstacles hampering fabrication high-power MoS2 transistors. The electronic transport characteristics transistors with two different structures investigated in detail, including a copper (Cu) metal–MoS2 channel metal–TiO2-MoS2 channel. Contact optimization is conducted by adjusting thickness TiO2 interlayer between metal MoS2. metal-interlayer-semiconductor (MIS) structure 1.5 nm thick layer smaller 22 meV. results provide insights into engineering MIS contacts interfaces to improve transistor characteristics.