Molecular Doping Enabling Mobility Boosting of 2D Sn <sup>2+</sup> ?Based Perovskites (Adv. Funct. Mater. 38/2022)
نویسندگان
چکیده
2D Sn2+-Based Perovskites In article number 2204870, Yong-Young Noh and co-workers demonstrate the high doping efficiency of halide perovskites using a simple molecular charge transfer approach provides new opportunity for employing in high-efficiency optoelectronic devices. A thin p-type dopant layer, F4-TCNQ MoO3, deposited thermal evaporation improves control damage-free electronic doping. The efficient without deterioration perovskite microstructure Hall mobility up to 100 cm2 V?1 s?1.
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2022
ISSN: ['1616-301X', '1616-3028']
DOI: https://doi.org/10.1002/adfm.202270211