Modifications in optoelectronic behavior of plasma-deposited amorphous semiconductor alloys via impurity incorporation

Spectroscopic and Optoelectronic Properties of Hydrogenated Amorphous Silicon-Chalcogen Alloys

Hydrogenated amorphous silicon-chalcogen alloy thin films have been the subject of growing interest during the past two decades. Thin films of these alloys are usually prepared by the decomposition of SiH4 and H2S or H2Se gas mixtures in a radiofrequency plasma glow discharge at a substrate temperature of 250°C. The alloy composition is varied by changing the gas volume ratio RV = [chalcogen/ s...

Properties of amorphous carbon–silicon alloys deposited by a high plasma density source

The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen, and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on hydrogenated amorphous carbon–silicon alloys (a-C12xSix :H) deposited by rf plasma enhanced chemical vapor deposition. T...

Crystallization Behavior and Control of Amorphous Alloys

Phase transformations of amorphous semiconductor alloys under high pressures

The paper reviews the results of experimental studies and thermodynamical modelling of metastable T –P diagrams of initially amorphous GaSb–Ge and Zn–Sb alloys which provide a new insight into the problem of pressure-induced amorphization.

Incubation dose for ion beam induced anisotropic growth of amorphous alloys: insight into amorphous state modifications

Under energetic ion bombardment, amorphous materials deform plastically in the form of anisotropic growth. At medium electronic stopping power (5 to 30 keV/nm) this phenomenon starts only after a certain incubation dose depending on values of the electronic stopping power and temperature. This delay is modeled on the basis of the assumption of a drastic irradiation induced viscosity reduction, ...