Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions
نویسندگان
چکیده
A detailed analysis of the self-heating effect measured by gate thermometry in FDSOI MOSFETs is conducted deep cryogenic conditions, showing linear temperature dependence differential thermal conductance over a wide range. Then, an analytical formulation rise as function power and ambient bulk valid down to very low temperatures proposed for first time. This model then used develop original compact self-heated drain current operated temperatures.
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ژورنال
عنوان ژورنال: Solid-state Electronics
سال: 2022
ISSN: ['0038-1101', '1879-2405']
DOI: https://doi.org/10.1016/j.sse.2022.108265