Modelling molecular field effect transistor using non-equilibrium Green function method
نویسندگان
چکیده
منابع مشابه
Modelling Logic Gates Design Using Pyrrole Based Single Molecular Field Effect Transistor
In this work, we demonstrated the logic gate design using pyrrole based single molecular field effect transistor (FET) for the first time. The semi empirical quantum transport method, which is applying non-equilibrium Green’s function (NEGF) in combination with self-consistent extended Huckel theory (SCEHT), has been adopted to study the charge transport characteristics of a modeled device. By ...
متن کاملNonlinear and fully distributed field effect transistor modelling procedure using time-domain method
An accurate and efficient modelling approach for field effect transistors (FET) as nonlinear active transmission lines is presented. The nonlinear active multiconductor transmission line (NAMTL) equations are obtained by considering the transistor as three active coupled lines operating in a nonlinear regime. This modelling procedure accurately spots the effect of wave propagation along the dev...
متن کاملSeismic Wave-Field Propagation Modelling using the Euler Method
Wave-field extrapolation based on solving the wave equation is an important step in seismic modeling and needs a high level of accuracy. It has been implemented through a various numerical methods such as finite difference method as the most popular and conventional one. Moreover, the main drawbacks of the finite difference method are the low level of accuracy and the numerical dispersion for l...
متن کاملIon sensitive field effect transistor modelling for multidomain simulation purposes
The proper design and simulation of modern electronic microsystems oriented towards environment monitoring requires accurate models of various ambient sensors. In particular, this paper presents a comprehensive model of an ion sensitive field effect transistor (ISFET). The model can be employed straightforwardly for simulations at device, circuit or system level. First, the model was validated ...
متن کاملVertical field-effect transistor based on wave-function extension
A. Sciambi,1,2 M. Pelliccione,1,2 M. P. Lilly,3 S. R. Bank,4,5 A. C. Gossard,4 L. N. Pfeiffer,6 K. W. West,6 and D. Goldhaber-Gordon2,7,* 1Department of Applied Physics, Stanford University, Stanford, California 94305-4045, USA 2SIMES, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA 3Center for Integrated Nanotechnologies, Sandia National Laboratorie...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2009
ISSN: 1742-6596
DOI: 10.1088/1742-6596/187/1/012087