Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes

Abstracts Quantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures achieving their high yield have facilitated emergence high-performance QD-LEDs. Meanwhile, charge-carrier dynamics QD-LED devices, which constitutes remaining core research area further improvement QD-LEDs, is, however, poorly understood yet. Here, we propose a charge transport model QD-LEDs comprehensively described by computer simulations. The injection is modelled carrier-capturing process, while effect electric fields at interfaces considered. simulated electro-optical characteristics such luminance, current density external efficiency (EQE) curves with varying voltages, show excellent agreement experiments. Therefore, our computational method proposed here provides useful means designing optimising devices.