Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers
نویسندگان
چکیده
منابع مشابه
Modeling of threading dislocation reduction in growing GaN layers
In this work, a model is developed to treat threading dislocation (TD) reduction in (0 0 0 1) wurtzite epitaxial GaN thin films. The model is based on an approach originally proposed for (0 0 1) FCC thin film growth and uses the concepts of mutual TD motion and reactions. We show that the experimentally observed slow TD reduction in GaN can be explained by low TD reaction probabilities due to T...
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In this article, we have developed models for threading dislocation ~TD! reduction due to the introduction of an intentionally strained layer. Three different types of dislocations have been considered in this model: misfit dislocations ~MDs!, mobile TDs, and TDs whose glide motion has been blocked by a MD crossing the glide path of the TD ~immobile TDs!. The models are based on MD formation by...
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The geometry of threading dislocations (TDs), non-equilibrium defects that are generated as a r e sult of stress relaxation in thin films, is considered in order to provide a basis for their reduction behavior during heteroepitaxial growth. This paper, the first of a two-part series, discusses the geometric possibility for reactions between TDs as a result of film growth. It is demonstrated tha...
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In the heteroepitaxial growth of films with large misfit with the underlying substrate ~linear mismatch strains in excess of 1%–2%! the generation of misfit dislocations and threading dislocations ~TDs! is ubiquitous for thicknesses well in excess of the equilibrium critical thickness. Experimental data suggest that the TD density in relaxed homogeneous buffer layers can be divided into three r...
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ژورنال
عنوان ژورنال: Journal of Electronic Materials
سال: 2015
ISSN: 0361-5235,1543-186X
DOI: 10.1007/s11664-015-3677-9