Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Structure of epitaxial Gd2O3 films grown on GaAs„100..

Single-crystal Gd2O3 films were grown epitaxially on GaAs~100! substrate. From the single-crystal momentum space analysis on four different samples, 185, 45, 25, and 18 Å thick, a Mn2O3 isomorphous cubic structure is identified. The Gd2O3 film aligns its twofold ~110! axis with the fourfold ~100! surface normal of the substrate, while aligning its @001# and @ 1̄10# axes with the @011# and @011̄# ...

Graft copolymer directed synthesis of micron-thick organized mesoporous TiO2 films for solid-state dye-sensitized solar cells.

Micron thick, well-organized mesoporous TiO(2) films with high porosity and good connectivity were synthesized by templating an amphiphilic graft copolymer for solid-state dye-sensitized solar cells.

Piezo-electric Thick Films for Sensing

Monolithic piezoelectric sensors commonly used for acoustic emission and ultrasonic inspection are non-conforming, bulky, costly and heavy. This means they do not fit well to complex geometries, they can be susceptible to damage, and on larger structures their cost and weight can be prohibitive. An alternative to this is the use of piezo-electric thick films, which comprise of piezo-electric pa...

Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy

Several oxide-GaAs heterostructures were fabricated using in situ multiple-chamber molecular beam epitaxy. The oxides include SiO2, MgO, and Ga2O3~Gd2O3!, all evaporated by an electron beam method. The SiO2 and Ga2O3~Gd2O3! films are amorphous while the MgO films are crystalline and part of the films are epitaxially grown on GaAs~100!. Among these heterostructures, the Ga2O3~Gd2O3!–GaAs shows a...

Mechanisms for Fatigue of Micron-Scale Silicon Structural Films