Meyer-Neldel Rule in Ac Conductivity of Cu Doped ZnO Thin Films

Electrical conductivity and Meyer–Neldel rule: The role of localized states in hydrogenated amorphous silicon

The Meyer–Neldel rule (MNR) has been observed in recent calculations of the electrical conductivity of hydrogenated amorphous silicon. To elucidate the origin of this effect, we have performed comparative studies on crystalline Si and non-hydrogenated a-Si. We find that the MNR is not present in the crystal, and is present in a-Si. This suggests that the existence of localized states and the en...

Transparent conductive Nd-doped ZnO thin films

Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display t...

Meyer-Neldel rule for dark current in charge-coupled devices

Al Doped ZnO Thin Films; Preparation and Characterization

ZnO is a promising material suitable for variety of novel electronic applications including sensors, transistors, and solar cells. Intrinsic ZnO film has inferiority in terms of electronic properties, which has prompted researches and investigations on doped ZnO films in order to improve its electronic properties. In this work, aluminum (Al) doped ZnO (AZO) with various concentrations and undop...

Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1...