MeV ion-beam analysis

Ion beam analysis.

Pitfalls in Ion Beam Analysis

FABRICATION OF OPTICAL CHANNEL WAVEGUIDES IN THE GaAdAlGaAs SYSTEM BY MeV ION BEAM BOMBARDMENT

We have fabricated optical channel waveguides in planar GaAdAlGaAs waveguides using 10 MeV oxygen ions at a fluence of 3 ~ 1 0 ' ~ and 3 ~ 1 0 ' ~ ions/cm2. Although disordering of GaAs/AlGaAs quantum well structures has previously been reported, to the best of the authors' knowledge the fabrication of channel waveguides using high energy oxygen bombardment has not been demonstrated in this mat...

TWO TYPES OF MeV ION BEAM ENHANCED ADHESION FOR Au FILMS ON

The ion beam-enhanced adhesion of thin Au films on vitreous silica ;ubstrates "as studied for a wide range of Cl ion beam doses for beam energies between 6.5 MeV and 21.0 MeV. Since the residual adhesron of Au on Si02 is low. the improved adhesion can be easily seen using the Scotch Tape Test. The threshold in the enhanced adhesion corresponding to passing the tape test occurs at two different ...

Phase Formation in Ion Beam Bombarded Al–Au Multilayers using High-current 2.0 MeV 4He‘ Ions

High-current ion beam bombardment (IBB) was performed to interdi†use Al–Au multilayers produced by evaporation on Ñat substrates of carbon, silicon and gold (typical thickness of each layer 150 nm, packages consist of 2 and 2.5 periods). During IBB with 2 MeV 4He‘ ions, the Al–Au interdi†usion was measured simultaneously with Rutherford backscattering (RBS). A complete mixing of the multilayers...