Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes
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چکیده
منابع مشابه
Metal-semiconductor-metal ultraviolet photodetector based on GaN
A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...
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In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occ...
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46 LLE Review, Volume 93 Metal–semiconductor–metal (MSM) photodiodes made on GaN are attractive candidates for fast ultraviolet (UV) signals due to the simplicity of fabrication and the visible blind feature (no response for λ > 365 nm). The temporal response of a MSM photodetector fabricated on GaN has been examined both theoretically1 and experimentally.2–4 While the theoretical modeling for ...
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Thin films (100-250 A) of several phthalocyanines (MgPc, ZnPc, AICIPc, TiOPc, CoPc, FePc, H2Pc) were investigated as sensitizers for photoelectrochemical processes at n-type Ti02 and W 0 3 single crystal electrodes in aqueous solution. The sensitized oxidation of several solution species (I-, Fe(CN)64-, hydroquinone, Fe(I1)-EDTA) occurred with photocurrents proportional to light intensity and s...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2009
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3103288