Merging Nanowires and Formation Dynamics of Bottom‐Up Grown InSb Nanoflakes
نویسندگان
چکیده
Indium Antimonide (InSb) is a semiconductor material with unique properties, that are suitable for studying new quantum phenomena in hybrid semiconductor-superconductor devices. The realization of such devices defect-free InSb thin films challenging, since has large lattice mismatch most common insulating substrates. Here, the controlled synthesis free-standing 2D nanostructures, termed as “nanoflakes”, on highly mismatched substrate presented. nanoflakes originate from merging pairs nanowires grown V-groove incisions, each slanted and opposing {111}B facet. relative orientation two within pair, governs nanoflake morphologies, exhibiting three distinct ones related to different grain boundary arrangements: no (type-I), Σ3- (type-II), Σ9-boundary (type-III). Low-temperature transport measurements indicate type-III relatively lower quality compared type-I type-II, based field-effect mobility. Moreover, exhibit conductance dip attributed an energy barrier pertaining Σ9-boundary. Type-I type-II promising This platform hosting next nanowire networks can be used selectively deposit superconductor by inter-shadowing, yielding InSb-superconductor minimal post-fabrication steps.
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2023
ISSN: ['1616-301X', '1616-3028']
DOI: https://doi.org/10.1002/adfm.202212029