Mechanism of cyclotron resonance induced conductivity in n-GaAs
نویسندگان
چکیده
منابع مشابه
Theory of spin hall conductivity in n-doped GaAs.
We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al. [Science 306, 1910 (2004)].
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Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs
Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs" (1995). Faculty Publications from the Department of Electrical and Computer Engineering. 73. In situ real time spectroscopic ellipsometry measurements were made during electron cyclotron resonance plasma etching of radio frequency biased GaAs and AlGaAs samples. Gas mixtures used were CH 4 ...
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ژورنال
عنوان ژورنال: Solid State Communications
سال: 1978
ISSN: 0038-1098
DOI: 10.1016/0038-1098(78)90296-x