MBE grown preferentially oriented CdMgO alloy on m- and c-plane sapphire substrates

نویسندگان

چکیده

Unlike other II-VI semiconductors, CdO-based transparent oxide has great potential application for the fabrication of many optoelectronic devices. In this work, we study growth CdxMg1-xO alloys on m- and c-plane sapphire substrates in Cd-rich to Mg-rich conditions using plasma-assisted molecular beam epitaxy method. A structural morphological CdMgO random was carried out X-ray diffraction Atomic Force Microscope (AFM) techniques whereas composition analysis done by Energy-dispersive (EDX) spectroscopy The optical properties thin films were investigated UV-Vis at room temperature. confirmed presence cubic rock salt structure with <111> crystallographic orientation <110> preferential m-plane sapphire. surface roughness measured AFM. From absorption curve, bandgaps determined Tauc relation it found that bandgap is influenced incorporation Mg2+ ions into CdO lattice. Bowing parameter calculated both samples c- sapphires.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates

Epitaxial lateral overgrowth in tandem with the first-principles calculation was employed to investigate the determining factor of a preferred orientation of GaN on SiO2-patterned m-plane sapphire substrates. We found that the (1100)-orientation is favored over the (1103)-orientation in the region with a small filling factor of SiO2, while the latter orientation becomes preferred in the region ...

متن کامل

Microstructural characterization of high indium-composition InXGa₁-XN epilayers grown on c-plane sapphire substrates.

The growth of high-quality indium (In)-rich In(X)Ga(1-X)N alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich In(X )Ga(1-X)N alloys are inevitable phenomena that degrade the crystal quality of In-rich In(X)Ga(1-X)N layers. Composition modulations were observed...

متن کامل

Characteristic of P-type AlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates

P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...

متن کامل

Microstructural Characterization of High Indium-Composition InXGa1−XN Epilayers Grown on c-Plane Sapphire Substrates

The growth of high-quality indium ~In!-rich InXGa1 XN alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich InXGa1 XN alloys are inevitable phenomena that degrade the crystal quality of In-rich InXGa1 XN layers. Composition modulations were observed in the In-ri...

متن کامل

Single domain m-plane ZnO grown on m-plane sapphire by radio frequency magnetron sputtering.

High-quality m-plane orientated ZnO films have been successfully grown on m-plane sapphire by using radio frequency magnetron sputtering deposition. The introduction of a nanometer-thick, low-temperature-grown ZnO buffer layer effectively eliminates inclusions of other undesirable orientations. The structure characteristics of the ZnO epi-layers were thoroughly studied by synchrotron X-ray scat...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Materials Science in Semiconductor Processing

سال: 2022

ISSN: ['1873-4081', '1369-8001']

DOI: https://doi.org/10.1016/j.mssp.2022.106608