Making BaZrS ₃ Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

The making of BaZrS3 thin films by molecular beam epitaxy (MBE) is demonstrated. forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. single-step MBE process results smooth on atomic scale, near-perfect stoichiometry and an atomically sharp interface LaAlO3 substrate. grow epitaxially via two competing growth modes: buffered epitaxy, a self-assembled layer that relieves epitaxial strain, direct rotated-cube-on-cube accommodates large lattice constant mismatch between oxide sulfide perovskites. This work sets stage for developing chalcogenide perovskites as family semiconductor alloys properties can be tuned strain composition high-quality films, has been long-established other systems including Si-Ge, III-Vs, II-VIs. methods demonstrated here also represent revival gas-source MBE.