Magnetoresistance of Mn-decorated topological line defects in graphene

Strain solitons and topological defects in bilayer graphene.

Bilayer graphene has been a subject of intense study in recent years. The interlayer registry between the layers can have dramatic effects on the electronic properties: for example, in the presence of a perpendicular electric field, a band gap appears in the electronic spectrum of so-called Bernal-stacked graphene [Oostinga JB, et al. (2007) Nature Materials 7:151-157]. This band gap is intimat...

Quantum blockade and loop currents in graphene with topological defects

Yanyang Zhang,1,2 Jiang-Ping Hu,3 B. A. Bernevig,4 X. R. Wang,2 X. C. Xie,5,1 and W. M. Liu1 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China 2Physics Department, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China 3Department of Physics, Purdue Universit...

Anisotropic magnetoresistance components in (Ga,Mn)As.

We explore the basic physical origins of the noncrystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. The sign of the noncrystalline AMR is found to be determined by the form of spin-orbit coupling in the host band and by the relative strengths of the nonmagnetic and magnetic contributions to the Mn impurity potential. We develop experimental methods yi...

Inorganic Nanostructures Decorated Graphene

Transport in indium-decorated graphene

The electronic transport properties of single layer graphene having a dilute coating of indium adatoms has been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed...