منابع مشابه
GaAs Heterojunction Bipolar Transistor Emitter Design
We demonstrate that GaAs-based HBTs with very low base currents at both low and high injection levels can be achieved using either Al0.35Ga0.65As or InGaP in the emitter with the proper optimization of structure and growth. We observe an order of magnitude reduction in space charge recombination current as the Al composition, and hence the energy-gap, of the emitter increases from 25% (1.77 eV)...
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It is shown that magnetic bipolar transistors can amplify currents even in the saturation regime, in which both the emitter–base and collector–base junctions are forward biased. The collector current and the current gain can change sign as they depend on the relative orientation of the equilibrium spin in the base and on the nonequilibrium spin in the emitter and collector. The predicted phenom...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2004
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1637954