<i>In situ</i> study of light emission from SiO<sub>2</sub> irradiated by 645 MeV Xe<sup>35+</sup> ions

Silicon dioxide (SiO<sub>2</sub>) is an important component of nuclear reactor optical fiber and also a candidate material for wast solidification. Owing to its special physical chemical characteristics, it used in many different technology fields like optics, electronics, energy orspace. Swift heavy ion irradiation can modify the crystal structure property SiO<sub>2</sub>. ions deposit their mainly by inelastic interaction. Highly ionized lattice atoms may be formed along trajectory, fraction electrical converted directly into kinetic ions. The experiment performed with Xe<sup>q+</sup> at terminal sector-focused cyclotron heavy-ion research facility Lanzhou (HIRFL). on-line spectral measurement carried out during irradiation. In darkroom, UV-visible light emission from target focused collimating lens, then analyzed Sp-2558 spectrometer equipped 1200 g/mm grating blazed 500 nm. present work, SiO<sub>2</sub> single crystals are irradiated 93–609 MeV dose range 1×10<sup>11</sup>–3×10<sup>11</sup> ions/cm<sup>2</sup>. During irradiation, spectra, 200–800 nm, 93, 245, 425 609 ions, obtained. Two bands centered 461 631 nm observed. These produced Frenkel exciton radiation de-excitation intensities closely related dose. results show that intensity increases electron loss index increasing. And owing damage caused spectrum decreases augment Ion loses throughout track via Sn Se interacting electrons respectively, lost estimated using SRIM code. simulated ranges recoil atom distribution, ionization (energy electrons), production presented. Based on deposition process, itself discussed. It indicates plays leading role process emission. In-situ great significance studying modification help understand