Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate
نویسندگان
چکیده
In this work, sub-micron-thick AlN/GaN transistors (HEMTs) grown on a silicon substrate for high-frequency power applications are reported. Using molecular beam epitaxy, an innovative ultrathin step-graded buffer with total stack thickness of 450 nm enables one to combine excellent electron confinement, as reflected by the low drain-induced barrier lowering, leakage current below 10 µA/mm and trapping effects up drain bias VDS = 30 V while using sub-150 gate lengths. As result, state-of-the-art GaN-on-silicon performances at 40 GHz have been achieved, showing no degradation after multiple large signal measurements in deep class AB V. Pulsed-mode large-signal characteristics reveal combination power-added efficiency (PAE) higher than 35% saturated output density (POUT) 2.5 W/mm 20 gate-drain distance 500 nm. To best our knowledge, is first demonstration high RF performance achieved GaN HEMTs substrate.
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ژورنال
عنوان ژورنال: Electronics
سال: 2023
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics12132974