Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

Area selective deposition via atomic layer (ALD) has proven its utility in elementary nanopatterning processes. In the case of complex 3D patterned substrates, processes lead to vertical sidewall coverage only, or top and bottom horizontal surface enable advanced further miniaturization microelectronic devices. While many fabrication strategies for only Topographically Selective Deposition (TSD) have already been developed, TSD needs attention. this work, we propose a versatile route on surfaces along with proof-of-concept such Ta2O5 thin film deposition. The strategy at stake relies plasma enhanced process assisted by energetic ion bombardment during step followed postgrowth wet etching step. effectiveness is based careful adjustment processing temperatures purposely set low temperature, most probably below ALD temperature window. Anisotropic substrate biasing provides an extra amount thermal energy exposed surfaces, which turn enables densification under growth. difference density property-selective generating TSD. A shown trenched substrates aspect ratio 14.