Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
نویسندگان
چکیده
منابع مشابه
Atomic Layer Deposition of Noble Metal Thin Films
3 Preface 4 List of publications 5 List of symbols and abbreviations 6
متن کاملLow Temperature Deposition of Metal Oxide Thin Films in Supercritical Carbon Dioxide using Metal-organic Precursors
A novel chemical route in thin film formation that includes the use of inorganic and organic peroxides and metal organic complexes soluble in supercritical carbon dioxide has been investigated for the deposition of alumina, titania and zirconia thin films at low temperatures (<150°C). The metal organic precursors used include: Al(acac)3, OTi(tmhd)2, and Zr(acac)4. Tert-butyl peroxide, and a 30%...
متن کاملSpoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
The plasmonic behavior of Ag thin films produced by plasma enhanced atomic layer deposition (PEALD) has been investigated. We show that as-deposited flat PEALD Ag films exhibit unexpected plasmonic properties, and the plasmonic enhancement can differ markedly, depending on the microstructure of the Ag film. Electromagnetic field simulations indicate that this plasmonic behavior is due to air ga...
متن کاملLow Temperature Atomic Layer Deposition of Tin Oxide
Atomic layer deposition (ALD) of tin oxide (SnOx) films was achieved using a newly synthesized tin precursor and hydrogen peroxide. We obtained highly pure, conductive SnOx films at temperatures as low as 50 C, which was possible because of high chemical reactivity between the new Sn precursor and hydrogen peroxide. The growth per cycle is around 0.18 nm/cycle in the ALDwindow up to 150 C, and ...
متن کاملLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining IIInitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ECS Transactions
سال: 2019
ISSN: 1938-6737
DOI: 10.1149/1.3205058